RECOVERY METHOD OF HIGH-PURIFIED POLY SILICON FROM A WASTE SOLAR WAFER

摘要

The present invention relates to a method for recovering high-purity polysilicon from a waste solar cell. More specifically, the anti-reflection film and the N layer of a waste solar cell are used in a short time by using a mixed solution composed of phosphoric acid, ammonium bifluoride and a chelating agent as an etching solution. The present invention relates to a method for recovering high-purity polysilicon from a waste solar cell that can simultaneously remove and prevent re-adsorption to efficiently recover high-purity polysilicon. According to the present invention, the step of removing the organic matter, dust, oil components on the surface layer of the waste solar cell using an alkaline solution; 10 to 50% by weight of phosphoric acid, 0.1 to 10% by weight of ammonium bifluoride, 0.1 to 5% by weight of chelating agent and 20 to 80% by weight of ultrapure water using a mixed solution as an etching solution to the surface layer of the waste solar cell at room temperature Etching to recover high purity polysilicon; Provided is a method for recovering high purity polysilicon from a spent solar cell, characterized in that it comprises a.