SILICON NANOWIRE CONTAINING HIGH DENSITY METAL NANOCLUSTER AND A METHOD FOR MANUFACTURING THE SAME CAPABLE OF IMPROVING ELECTRIC CONDUCTIVITY AND PHOTO CHARACTERISTIC

摘要

PURPOSE: Silicon nanowire containing high density metal nanocluster and a method for manufacturing the same are provided to uniformly form high density metal nanocluster on the surface of the silicon nanowire by additionally sintering a silicon substrate with a metal-silicon island.;CONSTITUTION: Metal nanocluster is formed on the surface of silicon nanowire. The average size of the metal nanocluster is between 1 and 10nm. The metal nanocluster includes one or more metals selected from a group including a transition metal group, a lanthanide group, a 13-rd group(except for boron), and 14-th group(except for carbon and silicon). A method for manufacturing the silicon nanowire includes the following: A metal thin film layer is formed on a silicon substrate. The silicon substrate is primarily sintered to form a metal-silicon island. Mixed gas is injected into a chamber to implement a secondary sintering process with respect to the silicon substrate to grow silicon nanowire on which metal nanocluster is formed.;COPYRIGHT KIPO 2012