PLASMA ETCHING DEVICE WITH A PUMPING UNIT FOR IMPROVING A PLASMA COMPONENT CAPABLE OF PREVENTING A STANDING WAVE EFFECT

摘要

PURPOSE: A plasma etching device with a pumping unit for improving a plasma component is provide to precisely control a pumping port by controlling a through hole area through a through hole formed in a top ring and a bottom ring.;CONSTITUTION: A cylindrical etching chamber receives a wafer. A cylindrical electrostatic chuck unit(30) includes a bottom electrode which receives the wafer. A pumping unit(40) discharges byproducts and remaining gas in the etching chamber. A pumping port controls the plasma component and pressure in the etching chamber. A top electrode forms an electric field for plasma reaction process in the etching chamber. A voltage supply unit(60) applies RF voltage to a positive electrode to generate an electric field between the top electrode and the bottom electrode.;COPYRIGHT KIPO 2012