首页> 外国专利> PLASMA PROCESSING APPARATUS CAPABLE OF UNIFORMLY GENERATING PLASMA WITHIN A REACTION CHAMBER BY CONTROLLING THE SHAPE OF AN UPPER ELECTRODE

PLASMA PROCESSING APPARATUS CAPABLE OF UNIFORMLY GENERATING PLASMA WITHIN A REACTION CHAMBER BY CONTROLLING THE SHAPE OF AN UPPER ELECTRODE

机译:通过控制上部电极的形状能够在反应腔室内均匀产生等离子体的等离子体处理装置

摘要

PURPOSE: A plasma processing apparatus is provided to easily arrange the upper electrode of a special shape within a reaction chamber by controlling the shape of the upper electrode which sanctions high frequency.;CONSTITUTION: A plasma processing apparatus(1) comprises a reaction chamber(100), an upper electrode(200), a plurality of controlling elements(300), and a bottom electrode(400). A power source for generating plasma is applied in the upper electrode. The controlling element is connected to the upper electrode in order to control a shape of the upper electrode. A substrate(10) is replaced by a bottom electrode. The shape of the upper electrode which sanctions high frequency is controlled by an operator. The plasma is uniformly generated by controlling the shape of the upper electrode within the reaction chamber.;COPYRIGHT KIPO 2012
机译:用途:提供一种等离子体处理设备,可通过控制对高频进行制裁的上部电极的形状来轻松地将特殊形状的上部电极布置在反应室内;组成:等离子体处理设备(1)包括一个反应室( 100),上电极(200),多个控制元件(300)和下电极(400)。用于产生等离子体的电源被施加在上电极中。控制元件连接到上电极以便控制上电极的形状。衬底(10)由底部电极代替。制裁高频的上电极的形状由操作员控制。通过控制反应室内上部电极的形状均匀产生等离子体。; COPYRIGHT KIPO 2012

著录项

  • 公开/公告号KR20110116922A

    专利类型

  • 公开/公告日2011-10-26

    原文格式PDF

  • 申请/专利权人 TERASEMICON CORPORATION;

    申请/专利号KR20100036606

  • 发明设计人 LEE KYUNG HO;

    申请日2010-04-20

  • 分类号H05H1/34;H01L21/3065;H01L31/18;

  • 国家 KR

  • 入库时间 2022-08-21 17:50:50

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