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PLASMA PROCESSING APPARATUS CAPABLE OF UNIFORMLY GENERATING PLASMA WITHIN A REACTION CHAMBER BY CONTROLLING THE SHAPE OF AN UPPER ELECTRODE
PLASMA PROCESSING APPARATUS CAPABLE OF UNIFORMLY GENERATING PLASMA WITHIN A REACTION CHAMBER BY CONTROLLING THE SHAPE OF AN UPPER ELECTRODE
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机译:通过控制上部电极的形状能够在反应腔室内均匀产生等离子体的等离子体处理装置
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摘要
PURPOSE: A plasma processing apparatus is provided to easily arrange the upper electrode of a special shape within a reaction chamber by controlling the shape of the upper electrode which sanctions high frequency.;CONSTITUTION: A plasma processing apparatus(1) comprises a reaction chamber(100), an upper electrode(200), a plurality of controlling elements(300), and a bottom electrode(400). A power source for generating plasma is applied in the upper electrode. The controlling element is connected to the upper electrode in order to control a shape of the upper electrode. A substrate(10) is replaced by a bottom electrode. The shape of the upper electrode which sanctions high frequency is controlled by an operator. The plasma is uniformly generated by controlling the shape of the upper electrode within the reaction chamber.;COPYRIGHT KIPO 2012
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