首页> 外国专利> METHOD OF MANUFACTURING SUBSTRATE FOR RECYCLED PHOTOMASK, METHOD OF MANUFACTURING BLANK FOR RECYCLED PHOTOMASK, RECYCLED PHOTOMASK, METHOD OF MANUFACTURING RECYCLED PHOTOMASK, AND PATTERN TRANSFER METHOD

METHOD OF MANUFACTURING SUBSTRATE FOR RECYCLED PHOTOMASK, METHOD OF MANUFACTURING BLANK FOR RECYCLED PHOTOMASK, RECYCLED PHOTOMASK, METHOD OF MANUFACTURING RECYCLED PHOTOMASK, AND PATTERN TRANSFER METHOD

机译:制造回收的光电掩膜的方法,制造回收的光电掩膜的空白方法,回收的光电掩膜,制造回收的光电掩膜的方法以及图案转移方法

摘要

The invention relates to a substrate manufacturing method, a blank manufacturing method, a regenerating photomask and a manufacturing method thereof. A used photomask having a film pattern and formed on a first main surface of a transparent substrate is applied. The method comprises a first step in which the film pattern is removed from the first main surface, and a second step in which the firstmain surface and a second main surface are respectively ground. In the grinding process, the grinding operations with the following grinding quantities are performed. The grinding quantities make thearea beyond the transfer printing areas of the first main surface and the second main surface have no damaged defects with a size larger than 300 (mu)m remained and have damaged defects with a size larger than 2 (mu)m but smaller than 300 (mu)m remained. The grinding quantities further make the transfer printing area of the second main surface have no damaged defects with a size larger than 100 (mu)m remained.
机译:本发明涉及基板的制造方法,坯料的制造方法,再生光掩模及其制造方法。涂覆在透明基板的第一主表面上形成的具有膜图案的使用过的光掩模。该方法包括第一步骤和第二步骤,在第一步骤中,从第一主表面去除膜图案;第二步骤,在第一步骤中,将第一主表面和第二主表面分别研磨。在磨削过程中,将执行以下磨削量的磨削操作。研磨量使得在第一主表面和第二主表面的转印区域之外的区域没有残留尺寸大于300μm的损坏缺陷,并且具有尺寸大于2μm的损坏缺陷,但是剩余的小于300μm。磨削量进一步使得第二主表面的转印区域没有尺寸大于100μm的损坏缺陷。

著录项

  • 公开/公告号KR20110116997A

    专利类型

  • 公开/公告日2011-10-26

    原文格式PDF

  • 申请/专利权人 HOYA CORPORATION;

    申请/专利号KR20110035726

  • 发明设计人 TSUCHIYA MASAYOSHI;FUJIMOTO TERUHIKO;

    申请日2011-04-18

  • 分类号H01L21/304;G03F1/08;H01L21/027;

  • 国家 KR

  • 入库时间 2022-08-21 17:50:54

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