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STRESS ENGINEERING CAPABLE OF REDUCING A DARK CURRENT OF A CMOS IMAGE SENSOR BY USING A RAMAN SPECTROSCOPY
STRESS ENGINEERING CAPABLE OF REDUCING A DARK CURRENT OF A CMOS IMAGE SENSOR BY USING A RAMAN SPECTROSCOPY
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机译:利用拉曼光谱法降低CMOS图像传感器暗电流的应力工程能力
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摘要
PURPOSE: A stress engineering capable of reducing a dark current of a CMOS image sensor is provided to reduce a white cell count by depositing a stress layer as a part of free-metal dielectric layer.;CONSTITUTION: A photo diode(105) is adjacent to an STI(Shallow Trench Isolation) structure. A transistor controls the operation of an active pixel cell(100). A stress layer(401) is deposited on the device of the active pixel cell. The stress layer has the second stress corresponding to the first stress applied to the substrate. The second stress reduces a dark current and a white cell count generated by the first stress.;COPYRIGHT KIPO 2012
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