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The method for the preparation of gold nanostructure using galvanic displacement reaction and gold nanostructure with improved surface enhanced Raman scattering

机译:利用电流置换反应和具有改进的表面增强拉曼散射的金纳米结构制备金纳米结构的方法

摘要

The present invention provides improved methods of production of gold nanostructures surface enhanced Raman scattering using a galvanic replacement reaction and accordingly relates to a gold nanostructure is made, more particularly, by spin coating the PS-b-P2VP reverse micelles in a silicon wafer to prepare a monolayer (step 1); Processing the monomolecular film prepared in step 1 with a solvent to selectively dissolve the P2VP phase and for producing a block copolymer having a nanoporous template (step 2); And provides a process for the preparation of surface enhanced Raman scattering is enhanced gold nano-structure, comprising the step (step 3) to deposit a gold producing block copolymers as a template for galvanic replacement reaction of the plating solution in the above step 2. Simple method of manufacturing method of the gold nano-structure according to the present invention does not include a dry etching process and a conventional high-temperature treatment step in the process for producing a block structure, depositing gold by the gold nano-fungal the copolymer by galvanic replacement reaction with it is possible to manufacture the gold nanostructures, useful since the plurality of the gold surface by the local electric field enhancement (hot spots), which upper portion is adjacent to or formed by a combination of nanostructures Raman scattering is enhanced, chemical, bio-materials and disease diagnostic sensor, etc. it can be used.
机译:本发明提供了利用电置换反应制备金纳米结构表面增强的拉曼散射的改进方法,因此涉及一种金纳米结构,更具体地讲,是通过在硅晶片中旋涂PS-b-P2VP反胶束来制备的。单层(步骤1);用溶剂处理在步骤1中制备的单分子膜以选择性地溶解P2VP相,并制备具有纳米孔模板的嵌段共聚物(步骤2);并提供一种制备表面增强拉曼散射的方法,该方法是增强金的纳米结构的方法,其包括步骤(步骤3),以沉积产金的嵌段共聚物为模板,用于上述步骤2中电镀液的电置换反应。根据本发明的金纳米结构的制造方法的简单方法在用于制造嵌段结构的工艺中不包括干蚀刻工艺和常规的高温处理步骤,所述工艺通过金纳米真菌沉积共聚物来沉积金。通过电流置换反应可以制造金纳米结构,这是有用的,因为通过局部电场增强(热点)形成的多个金表面,其上部与纳米结构的组合相邻或由纳米结构的组合形成,从而增强了拉曼散射。 ,化学,生物材料和疾病诊断传感器等都可以使用。

著录项

  • 公开/公告号KR101027524B1

    专利类型

  • 公开/公告日2011-04-06

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20090060675

  • 发明设计人 김동하;

    申请日2009-07-03

  • 分类号B82B3;B82B1;

  • 国家 KR

  • 入库时间 2022-08-21 17:50:25

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