Surface modification method and surface modification apparatus of interlayer insulating film

摘要

A surface modification method and a surface modification apparatus for interlayer insulating films are disclosed which enable to improve adhesion properties of an interlayer insulating film without changing the dielectric constant. An interlayer insulating film is formed on a semiconductor wafer (10) by firing a coating film. The surface of the interlayer insulating film is modified by heating the inside of a reaction tube (2), where the semiconductor wafer (10) is housed, to a certain temperature while supplying a gas with oxidizing activity into the reaction tube (2). The gas with oxidizing activity is ozone, water vapor, oxygen or a mixed gas of hydrogen and oxygen.