Manufacturing method of low temperature sintered SiC having superplasticity or high deformation rate

摘要

The present invention relates to a method for producing low-temperature sintered silicon carbide exhibiting superplasticity or high-speed deformation, and to silicon carbide prepared as described above, and more specifically, as a sintering aid, Al + B + C, Al + B ₄ C + C, Materials obtained by calcining at least one selected from Al ₄ C ₃ + B + C, or Al ₄ C ₃ + B ₄ C + C at a temperature ranging from 1300 to 1900 ° C., for example Al ₈ B ₄ C ₇ or By synthesizing Al ₃ BC ₃ and used alone or in combination to sinter the silicon carbide, densified silicon carbide close to the theoretical density can be produced despite sintering at a lower temperature and shorter time than the normal sintering temperature of silicon carbide. It provides a method for producing low-temperature sintered silicon carbide that exhibits superplasticity or high-speed deformation, so that the silicon carbide produced as described above.;According to the present invention, even though silicon carbide is sintered at a lower temperature and shorter time than a conventional sintering temperature, a very densified sintered body can be obtained, and the manufactured silicon carbide has nanoparticles having fine particles of 3 μm or less, preferably 500 nm or less. As a result, it is possible to reduce expensive silicon carbide manufacturing costs, and even in the case of growing the particle size up to 500 nm, it exhibits superplastic behavior at a lower temperature than that of the silicon carbide sintered body manufactured by the conventional method. There is an advantage that can improve the processing performance of the silicon carbide sintered under.;In addition, silicon carbide sintered by hot sintering using low-cost silicon carbide powder in sub-micrometer units also exhibits high-speed deformation behavior at a low temperature of 1600 ° C, further increasing the possibility of practical use. It includes the advantages.;Superplasticity, high speed deformation, silicon carbide, low temperature sintering, sintering aid, Al8B4C7, Al3BC3, calcination, theoretical density