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Method of fabricating CdS nanowire using solution-liquid-solid

机译:利用溶液-液-固制备CdS纳米线的方法

摘要

Disclosed is a method for producing cadmium sulfide nanowires having high density and crystallinity using a low temperature solution synthesis method.;Method for producing cadmium sulfide nanowires using the solution synthesis method according to the present invention (a) by dissolving cadmium oxide (CdO) in a surfactant consisting of 1-ODE solvent and oleic acid, TOPO and HDA at a temperature of 200 ~ 240 ℃ Preparing a first solution; (b) dissolving sulfur in TBP at a temperature of 75 to 85 ° C. to prepare a second solution; (c) after charging the FTO soda-lime glass substrate coated with bismuth (Bi) surface to the first solution, the second solution was added to the first solution, and the cadmium sulfide on the FTO soda-lime glass substrate Growing nanowires; (d) maintaining at 215-225 ° C. to grow until the cadmium sulfide nanowires have a target length; And (e) washing the FTO soda-lime glass substrate on which the cadmium sulfide nanowires are grown using at least one washing solution of chloroform and acetone.
机译:本发明公开了一种使用低温溶液合成法制备具有高密度和结晶度的硫化镉纳米线的方法。根据本发明的溶液合成方法制备硫化镉纳米线的方法(a)是将氧化镉(CdO)溶解在由1-ODE溶剂和油酸,TOPO和HDA组成的表面活性剂,在200〜240℃的温度下制备第一溶液。 (b)在75至85℃的温度下将硫溶解在TBP中制备第二溶液; (c)将涂覆有铋(Bi)表面的FTO钠钙玻璃基板充入第一溶液中之后,将第二溶液添加到第一溶液中,并在FTO钠钙玻璃基板上生长硫化镉。 (d)保持在215-225℃下生长直到硫化镉纳米线具有目标长度;并且(e)使用氯仿和丙酮中的至少一种洗涤溶液洗涤在其上生长有硫化镉纳米线的FTO钠钙玻璃衬底。

著录项

  • 公开/公告号KR101076523B1

    专利类型

  • 公开/公告日2011-10-24

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20080136997

  • 发明设计人 성윤모;곽우철;

    申请日2008-12-30

  • 分类号B82B3;C01G9/08;B82Y40;

  • 国家 KR

  • 入库时间 2022-08-21 17:49:34

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