2O=1:10:30 at 70-90°C, mechanical finishing with removal of surface layer to depth of 5 mcm, chemical etching in solution HCl:HF:H2O=1:50:150 and finish machining of plates.;EFFECT: higher efficiency of processing.;4 dwg"/>
公开/公告号RU2430824C2
专利类型
公开/公告日2011-10-10
原文格式PDF
申请/专利号RU20090128940
申请日2009-07-27
分类号B24B1/00;C09K3/14;
国家 RU
入库时间 2022-08-21 17:48:13