Copper-indium-gallium-selenide solar cells manufacturing involves assembling layers on carrier provided on metallic back contact, and absorber layer, buffer layer, tunnel junction and transparent conductor oxide

摘要

Copper-indium-gallium-selenide solar cells manufacturing involves assembling layers on carrier (1) provided on a metallic back contact (2), an absorber layer, a buffer layer, a tunnel junction and a transparent conductor oxide. A substrate is used as carrier, which is made of molybdenum, copper-indium-selenide, copper-indium-gallium-selenide, cadmium sulfide, indium zinc oxide and tin-doped indium oxide or aluminum doped zinc oxide. An independent claim is also included for a thin-film solar cell, which comprises a support and metallic back contact.