首页> 外国专利> Method for producing e.g. two-stage selective solar cell emitter, involves producing dopant source on surface of semiconductor body, structuring dopant source, and inserting dopants from structured dopant source into semiconductor body

Method for producing e.g. two-stage selective solar cell emitter, involves producing dopant source on surface of semiconductor body, structuring dopant source, and inserting dopants from structured dopant source into semiconductor body

机译:生产方法例如两级选择性太阳能电池发射极,涉及在半导体本体的表面上产生掺杂剂源,构造掺杂剂源,以及将来自结构化掺杂剂源的掺杂剂插入半导体本体中

摘要

The method involves inserting dopants into a region at a surface (106) of a semiconductor body (100). A dopant source (104) is produced on the surface, and is structured by an etching mask, which is formed as a lacquer sample. Other dopants are inserted from the structured dopant source into the body. An isolation layer e.g. nitride layer, is applied on the body for structuring the dopant source, and is opened at certain places corresponding to the lacquer sample when removing the lacquer sample in a lift-off process. A contact metal sample is produced after removing the lacquer sample.
机译:该方法包括将掺杂剂插入到半导体本体(100)的表面(106)处的区域中。掺杂剂源(104)在表面上产生,并由形成为漆样品的蚀刻掩模构成。其他掺杂物从结构化掺杂物源插入体内。隔离层例如氮化物层被施加到主体上以构造掺杂剂源,并且在剥离工艺中去除漆样时在对应于漆样的某些位置处开口。去除漆料样品后产生接触金属样品。

著录项

  • 公开/公告号DE102009034087A1

    专利类型

  • 公开/公告日2011-01-27

    原文格式PDF

  • 申请/专利权人 SOLSOL GMBH;

    申请/专利号DE20091034087

  • 发明设计人 ROSTAN JOHANNES;

    申请日2009-07-21

  • 分类号H01L31/18;H01L31/068;

  • 国家 DE

  • 入库时间 2022-08-21 17:47:46

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