首页> 外国专利> Removing impurities from a melt, comprises providing a crucible with a melt of non-ferrous metal or semiconductor material, directionally solidifying the melt to form solidified block, and removing a portion of residual melt from crucible

Removing impurities from a melt, comprises providing a crucible with a melt of non-ferrous metal or semiconductor material, directionally solidifying the melt to form solidified block, and removing a portion of residual melt from crucible

机译:从熔体中去除杂质包括:向坩埚提供有色金属或半导体材料的熔体;定向凝固该熔体以形成固化的块;以及从坩埚中去除一部分残留的熔体

摘要

Removing impurities from a melt, comprises: providing at least a first crucible (1) with a melt of a non-ferrous metal, preferably a semiconductor material; directionally solidifying the melt to form a solidified block (15), which is adjoined in a region of a solidification front of a liquid phase of the residual me and removing at least a portion of the residual melt from the crucible. The flow of the solidification font during the solidification is affected by an asymmetric temperature field in such a manner that the residual melt is collected in a predetermined area in the crucible. Removing impurities from a melt, comprises: providing at least a first crucible (1) with a melt of a non-ferrous metal, preferably a semiconductor material, where the crucible exhibits a base (3) and at least one side wall (4), and is partially surrounded with a temperature-regulating device (27); directionally solidifying the melt to form a solidified block (15) in the crucible, which is adjoined in a region of a solidification front of a liquid phase of the residual me and removing at least a portion of the residual melt from the crucible. The flow of the solidification font during the solidification of the melt is affected by an asymmetric temperature field in such a manner that the residual melt is collected in a predetermined area in the crucible. An independent claim is also included for a device for removing impurities from a concentrated melt, comprising: (a) a crucible for receiving a melt of a semiconductor material, and for solidifying the melt, with a base vertically extending in a vertical direction, and at least one adjoining side wall, where the side wall is extended from the base in the vertical direction to an upper end; (b) at least one temperature-regulating device for controlling the solidification process of the me and (c) a removing device for removing a portion of the melt from the crucible, where at least one temperature-regulating device is arranged and/or controlled in such a manner that the heat input is increased in a predetermined partial-area of the crucible for producing an asymmetric temperature field locally in the crucible.
机译:从熔体中去除杂质包括:至少为第一坩埚(1)提供有色金属,优选半导体材料的熔体;定向凝固熔体以形成凝固块(15),其在残余熔体的液相的凝固前沿的区域中邻接;从坩埚中除去至少一部分残余熔体。固化过程中固化字体的流动受到不对称温度场的影响,使得残留的熔体收集在坩埚中的预定区域中。从熔体中去除杂质包括:向至少第一坩埚(1)提供有色金属,优选半导体材料的熔体,其中该坩埚具有基底(3)和至少一个侧壁(4)。 ;并且部分地被调温装置(27)包围;定向凝固熔体以在坩埚中形成凝固块(15),其在残余熔体的液相的凝固前沿的区域中邻接;从坩埚中除去至少一部分残余熔体。熔体凝固期间的凝固字体的流动受到不对称温度场的影响,使得残留的熔体收集在坩埚中的预定区域中。还包括一种用于从浓缩的熔体中除去杂质的装置的独立权利要求,该装置包括:(a)坩埚,其用于容纳半导体材料的熔体并且用于使熔体固化,其中,基座沿竖直方向竖直地延伸;以及至少一个邻接的侧壁,其中该侧壁在垂直方向上从基部延伸到上端; (b)至少一个用于控制熔体凝固过程的温度调节装置; (c)一种用于从坩埚中去除一部分熔体的去除装置,其中至少一个温度调节装置被布置和/或控制为使得在所述玻璃的预定局部区域中增加热输入。用于在坩埚中局部产生不对称温度场的坩埚。

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