首页> 外国专利> Method for growing a single crystal, comprises producing a melt from a mixture containing aluminum-garnet and/or gallium-garnet and/or a rare earth element and/or a mixture of metal oxides

Method for growing a single crystal, comprises producing a melt from a mixture containing aluminum-garnet and/or gallium-garnet and/or a rare earth element and/or a mixture of metal oxides

机译:用于生长单晶的方法,包括从包含铝石榴石和/或镓石榴石和/或稀土元素的混合物和/或金属氧化物的混合物产生熔体。

摘要

The method for growing a single crystal, comprises producing a melt from a mixture containing the aluminum-garnet and/or gallium-garnet and/or a rare earth element and/or a mixture of metal oxides (Me 2O 3, where Me is rare earth elements, gallium and/or aluminum). The melt comprises an aluminum fluoride, gallium fluoride and/or a fluoride of rare earth elements, where the aluminum oxide and/or gallium oxide exist in the mixture related to the garnet against the rare earth fluoride in excess in stoichiometric manner. The method for growing a single crystal, comprises producing a melt from a mixture containing the aluminum-garnet and/or gallium-garnet and/or a rare earth element and/or a mixture of metal oxides (Me 2O 3, where Me is rare earth elements, gallium and/or aluminum). The melt comprises a aluminum fluoride, gallium fluoride and/or a fluoride of rare earth elements, where the aluminum oxide and/or gallium oxide exist in the mixture related to the garnet against the rare earth fluoride in excess in stoichiometric manner and/or an oxide of rare earth element exists in the mixture related to the garnet against the gallium fluoride and/or the aluminum fluoride in excess in stoichiometric manner. The portion of fluoride or the fluorides in the melt is 5-20 wt.%. A portion of fluxing agent is formed from fluorine-containing atmosphere and an additive of metal or oxide of aluminum and/or the rare earth and/or rare earths in the melt is formed. The crystallization is carried out by Czochralski-, vertical gradient freezing- or Bridgman method. The melt is present in a pressure vessel. A gas-tight container contains fluorine, hydrogen fluoride, carbon tetrafluoride, hydrogen, carbon monoxide, carbon dioxide and/or inert gas such as argon and/or nitrogen. The container contains a mixture of argon, carbon-monoxide/carbon-dioxide and carbon tetrafluoride or from fluorine and hydrogen. The melt is sealed with a supernatant- cover or fluid against escaping of gas. The temperature is 10[deg] C above the melting temperature of the solid mixture. Independent claims are included for (1) a crystal; (2) an optical element of a crystal; and (3) a scintillator.
机译:用于生长单晶的方法包括从包含铝石榴石和/或镓石榴石和/或稀土元素的混合物和/或金属氧化物(Me 2O 3,其中Me是稀有金属)的混合物产生熔体。稀土元素,镓和/或铝)。熔体包含氟化铝,氟化镓和/或稀土元素的氟化物,其中与石榴石有关的混合物中的氧化铝和/或氧化镓以化学计量的方式过量存在,以对抗稀土氟化物。用于生长单晶的方法包括从包含铝石榴石和/或镓石榴石和/或稀土元素的混合物和/或金属氧化物(Me 2O 3,其中Me是稀有金属)的混合物产生熔体。稀土元素,镓和/或铝)。熔体包含氟化铝,氟化镓和/或稀土元素的氟化物,其中与石榴石有关的混合物中的氧化铝和/或氧化镓以化学计量的方式过量存在,与稀土石榴石和/或与石榴石有关的混合物中,稀土元素的氧化物以化学计量比过量地存在于针对石榴石的混合物中。熔体中氟化物的比例为5-20重量%。助熔剂的一部分由含氟气氛形成,并且形成金属或铝的氧化物和/或熔体中的稀土和/或稀土的添加剂。结晶通过直拉法,垂直梯度冷冻法或布里奇曼法进行。熔体存在于压力容器中。气密容器容纳氟,氟化氢,四氟化碳,氢,一氧化碳,二氧化碳和/或惰性气体,例如氩气和/或氮气。容器中装有氩气,一氧化碳/二氧化碳和四氟化碳或氟和氢的混合物。用上清液盖或流体密封熔体以防止气体逸出。该温度比固体混合物的熔融温度高10℃。 (1)晶体包括独立权利要求; (2)晶体的光学元件; (3)闪烁体。

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