首页> 外国专利> Structured silicon layer for e.g. silicon solar cell, has boundary surface with bent partial surfaces exhibiting nano-structure that is extended into layer upto depth between four hundred nanometer and five micrometer

Structured silicon layer for e.g. silicon solar cell, has boundary surface with bent partial surfaces exhibiting nano-structure that is extended into layer upto depth between four hundred nanometer and five micrometer

机译:例如的结构化硅层硅太阳能电池,其边界表面具有弯曲的局部表面,呈现出纳米结构,该纳米结构延伸到层中,深度达四百纳米至五微米

摘要

The layer (1) has a boundary surface (2) including partial surfaces (3) that are bent relative to a main extending plane (4) of the layer. Width (b) of the bent partial surfaces is 5 micrometer in average. The width is projected in the main extending plane of the layer. The bent partial surfaces exhibit a nano-structure (5) that is extended into the layer upto depth between 400 nanometer and 5 micrometer. The bent partial surfaces form V-shaped structures, trapezoidal structures or pyramid-shaped structures.
机译:层(1)具有边界表面(2),该边界表面(2)包括相对于该层的主延伸平面(4)弯曲的部分表面(3)。弯曲的部分表面的宽度(b)平均为5微米。宽度投影在该层的主延伸平面中。弯曲的局部表面表现出纳米结构(5),该纳米结构延伸到层中直至深度在400纳米至5微米之间。弯曲的局部表面形成V形结构,梯形结构或金字塔形结构。

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