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摘要

PROBLEM TO BE SOLVED: To provide a light emitting device which can be easily manufactured because of its simple structure and which can stably keep a large emission efficiency for a long time.;SOLUTION: The light emitting device is provided with a GaN substrate 1 as a nitride semiconductor substrate, an n-type Al_xGa_1-xN layer 3 on the first main surface side of the nitride semiconductor substrate, a p-type Al_xGa_1-xN layer 5 which is located further from the n-type Al_xGa_1-xN layer 3 when viewed from the nitride semiconductor substrate, and a quantum well 4 located between the n-type Al_xGa_1-xN layer 3 and the p-type Al_xGa_1-xN layer 5. In this case, the specific resistance of the nitride semiconductor substrate is 0.5 Ωcm or less, and the side of the p-type Al_xGa_1-xN layer 5 is mounted face-down, and the light is emitted from the second main surface 1a that is opposite to the first main surface of the nitride semiconductor substrate. The second main surface 1a of nitride semiconductor substrate has trenches 80 formed therein.;COPYRIGHT: (C)2006,JPO&NCIPI