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a method to determine the critical size of an inclusion in a sputtertarget aluminium or aluminium alloy

机译:确定溅射靶材铝或铝合金中夹杂物临界尺寸的方法

摘要

The present invention relates to a method for determining a critical size for a diameter of an AlSUB2/SUBOSUB3 /SUBinclusion ( 38 ) in an Al or Al alloy sputter target ( 42 ) to prevent arcing during sputtering thereof. This method includes providing a sputtering apparatus having an argon plasma. The plasma has a plasma sheath of a known thickness during sputtering under a selected sputtering environment of an Al or Al alloy sputter target having an AlSUB2/SUBOSUB3 /SUBinclusion-free sputtering surface. When the thickness of the sheath is known for a selected sputtering environment, the critical size of an AlSUB2/SUBOSUB3 /SUBinclusion ( 38 ) can be determined based upon the thickness of the sheath. More specifically, the diameter of an AlSUB2/SUBOSUB3 /SUBinclusion ( 38 ) in an Al or Al alloy sputter target ( 42 ) must be less than the thickness of the plasma sheath during sputtering under the selected sputtering environment to inhibit arcing.
机译:本发明涉及一种用于确定Al或Al合金溅射靶材(42)中的Al 2 O 3 夹杂物(38)的直径的临界尺寸的方法。以防止在溅射过程中产生电弧。该方法包括提供具有氩等离子体的溅射设备。在具有Al 2 O 3 无夹杂物溅射表面的Al或铝合金溅射靶的选定溅射环境下进行溅射时,等离子体具有已知厚度的等离子体鞘。当在选定的溅射环境中已知护套的厚度时,可以根据合金的厚度确定Al 2 O 3 夹杂物的临界尺寸(38)。鞘。更具体地,Al或铝合金溅射靶材(42)中的Al 2 O 3 夹杂物(38)的直径必须小于等离子体鞘的厚度。在选定的溅射环境下进行溅射时,可防止产生电弧。

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