high 1t1r resistive ram speichermatrix with a common bitleitung and a common sourceleitung

摘要

A common bit/common source line high density 1T1R (one transistor/one resistor) R-RAM array, and method for operating said array are provided. The R-RAM array comprises a first transistor with a drain connected to a non-shared bit line with a first memory resistor. The gates of the first, second, third, and fourth transistors are sequentially connected to a common word line. The R-RAM array comprises at least one common bit line. A second memory resistor is interposed between the drain of the second transistor and the common bit line. Likewise, a third memory resistor is interposed between the drain of the third transistor and the common bit line. A common source line is connected to the sources of the third and fourth transistors. The R-RAM array comprises m rows of n sequential transistors. IMAGE