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Brief description of embodiments of a floating gate having an alternating sequence of lines in the first and second materials

机译:在第一和第二材料中具有交替的线顺序的浮栅的实施例的简要描述

摘要

A layer of diblock copolymer comprising at least two polymers and having a lamellar structure perpendicular to a substrate (3) is deposited on a first gate insulator (4) formed on the substrate. One of the polymers of the diblock copolymer layer is then removed in order to form grooves which are parallel in the copolymer layer. The grooves are filled by a first material (6) made of metal or semiconductor - conductor and the remainder of the copolymer layer is eliminated. A second dielectric material (7) is deposited to form a second gate insulator. The second gate insulator of the floating gate then comprises an alternation of first and second parallel lines, respectively in the first (6) and second (7) materials, the second material (7) encapsulating the lines in the first material.
机译:将包含至少两种聚合物并且具有垂直于基底(3)的层状结构的二嵌段共聚物层沉积在形成在基底上的第一栅极绝缘体(4)上。然后除去二嵌段共聚物层的一种聚合物,以便形成在共聚物层中平行的凹槽。凹槽由金属或半导体导体制成的第一材料(6)填充,共聚物层的其余部分被省去了。沉积第二介电材料(7)以形成第二栅极绝缘体。然后,浮置栅极的第二栅极绝缘体包括分别在第一(6)和第二(7)材料中的第一和第二平行线的交替,第二材料(7)将线封装在第一材料中。

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