首页> 外国专利> Method for filling cavity in e.g. conductor substrate with nickel to form microsystem, involves partially removing masking layer from zone to partially or completely uncover cavity, and depositing metallic material in cavity

Method for filling cavity in e.g. conductor substrate with nickel to form microsystem, involves partially removing masking layer from zone to partially or completely uncover cavity, and depositing metallic material in cavity

机译:填充腔体的方法具有镍的导体基板,形成微系统,包括从区域中部分去除掩膜层以部分或完全露出空腔,并在空腔中沉积金属材料

摘要

The method involves forming a masking layer (106) on a support (100) e.g. conductor substrate, in which a cavity is formed, where the masking layer covers the support, cavity walls and cavity bottom and comprises a zone whose thickness is less than or equal to a given thickness on sides and the bottom of the cavity. The masking layer is partially removed from the zone to partially or completely uncover the cavity. A metallic material (108) is deposited in the cavity.
机译:该方法包括在支撑体(100)例如上形成掩模层(106)。导体衬底,其中形成有空腔,其中掩膜层覆盖支撑物,空腔壁和空腔底部,并在空腔的侧面和底部包括厚度小于或等于给定厚度的区域。掩模层从该区域被部分去除以部分地或完全地露出空腔。金属材料(108)沉积在腔中。

著录项

  • 公开/公告号FR2950732A1

    专利类型

  • 公开/公告日2011-04-01

    原文格式PDF

  • 申请/专利权人 COMMISSARIAT A LENERGIE ATOMIQUE;

    申请/专利号FR20090058448

  • 发明设计人 PARES GABRIEL;

    申请日2009-11-27

  • 分类号H01L21/027;H01L21/70;

  • 国家 FR

  • 入库时间 2022-08-21 17:45:50

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