Method for manufacturing integrated circuit, involves performing partial etching on layer through another layer until cavity crosses through layer, engraving partial layers in side walls of cavity, and completely removing former layer

摘要

The method involves forming a through cavity (1) in a layer, and performing a partial etching on another layer (DE) to deepen depression in the latter layer, where the layers form a step (3). A partial isotropic etching of the former layer is performed using peroxide to broaden edges of the cavity filled with metal. Another partial etching of the latter layer is performed through the former layer until the cavity crosses through the latter layer. The partial layers are engraved in side walls of the cavity. The former layer is completely removed. An independent claim is also included for an integrated circuit.