Device for providing high voltage to integrated circuit for erasing and/or programming memory in electronic system, has application unit to apply high voltage to terminals when writing command is detected by monitoring unit

摘要

The device (VMCT1) has connection terminals (P20-P22, P22', P23) connected to a ground terminal (P0), supply voltage receiving terminal (P1) and connection terminals (P2, P3) of an integrated circuit (IC3-1). A central spy unit (CU), connection terminals and switch (SW1) are used to spy on a data or a clock signal (S1) and detect a memory writing command. An application unit formed of the spy unit, the pump, timer-sequencer circuit (TSCT), the switch and the connection terminal (P22) applies high voltage (HV) or (Vpp) to the terminals (P1-P3) when the command is detected by a monitoring unit. Independent claims are also included for the following: (1) an electronic system comprising a memory integrated circuit (2) a method for providing high voltage to an integrated circuit for erasing and/or programming a memory.