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STRAIN-RESISTIVE THIN FILM AND SENSOR USING THE STRAIN-RESISTIVE THIN FILM

机译:应变薄膜和使用应变薄膜的传感器

摘要

PROBLEM TO BE SOLVED: To provide a strain-resistive thin film capable of holding down a TCR value as the whole strain-resistive thin film, of stabilizing an electric characteristic represented by specific resistance ρ, with respect to a temperature cycle and of realizing excellent high-temperature stability and a high gauge factor, and to provide a sensor using the strain-resistive thin film.;SOLUTION: A strain-resistive thin film 10 or 20 is formed with a laminated film. The laminated film includes at least one or more layers of: a first thin film 11 or 21 that is made of a chromium thin film, a chromic oxide thin film or a chromium nitride thin film; and a second thin film 12 or second thin films 22 and 23 that is or are layered at a first surface 111 of both main surfaces of the first thin film 11 or at both a first surface 211 and a second surface 212, and that has or have a TCR value [ppm K-1] smaller than the first thin film when making film thickness of the thin films identical. Either second thin film 12 or 22 constituting the laminated film is exposed as an exposed surface S of the laminated film.;COPYRIGHT: (C)2013,JPO&INPIT
机译:解决的问题:提供一种应变电阻薄膜,其能够抑制作为整个应变电阻薄膜的TCR值,相对于温度循环稳定由电阻率ρ表示的电特性,并且实现优异的耐应力性。高温稳定性和高应变系数,并提供使用该应变电阻薄膜的传感器。解决方案:应变电阻薄膜10或20由层压膜形成。层压膜包括以下至少一层或多层:由铬薄膜,氧化铬薄膜或氮化铬薄膜制成的第一薄膜11或21;和第二薄膜12或第二薄膜22和23层叠在或层叠在第一薄膜11的两个主表面的第一表面111或第一表面211和第二表面212上,并且具有或当使薄膜的膜厚相同时,其TCR值[ppm K -1 ]小于第一薄膜。构成层压膜的第二薄膜12或22作为层压膜的暴露表面S暴露。;版权所有:(C)2013,JPO&INPIT

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