首页> 外国专利> METHOD OF MANUFACTURING DIELECTRIC FILM, METHOD OF MANUFACTURING DECOUPLING CAPACITOR, AND DECOUPLING CAPACITOR

METHOD OF MANUFACTURING DIELECTRIC FILM, METHOD OF MANUFACTURING DECOUPLING CAPACITOR, AND DECOUPLING CAPACITOR

机译:制造电介质膜的方法,制造去耦电容器的方法以及去耦电容器

摘要

PROBLEM TO BE SOLVED: To obtain a dielectric film having film strength for allowing increase of capacitance by making the pitch of an internal terminal larger than the pitch of an external terminal, and a high particle filling degree, as for a method of manufacturing the dielectric film, a method of manufacturing a decoupling capacitor, and the decoupling capacitor.;SOLUTION: A first mother particle group having an average particle diameter classified in 600-800 nm, a second mother particle group having the same composition as that of the first mother particle group and an average particle diameter classified in 150-200 nm, and a third mother particle group having the same composition as that of the first mother particle group and an average particle diameter classified in 50 nm or less are floated in the air, the floated first to third mother particle groups are sprayed from a nozzle to deposit the dielectric film on a deposition substrate.;COPYRIGHT: (C)2013,JPO&INPIT
机译:解决的问题:作为电介质的制造方法,获得一种电介质膜,该电介质膜具有通过使内部端子的间距大于外部端子的间距而允许增加电容的膜强度,并且粒子填充度高。膜;一种制造去耦电容器的方法;和一种去耦电容器。解决方案:平均粒径在600-800 nm范围内的第一母颗粒组,第二母颗粒组具有与第一母颗粒相同的组成颗粒组和平均粒径在150-200 nm范围内的颗粒,以及具有与第一母颗粒组相同组成且平均粒径在50 nm以下的第三母颗粒组漂浮在空气中,从喷嘴喷出浮动的第一至第三母颗粒组,以在沉积基板上沉积介电膜。版权所有:(C)2013,JPO&INPIT

著录项

  • 公开/公告号JP2012209463A

    专利类型

  • 公开/公告日2012-10-25

    原文格式PDF

  • 申请/专利权人 FUJITSU LTD;

    申请/专利号JP20110074801

  • 申请日2011-03-30

  • 分类号H01G4/30;H01G4/12;H01L23/12;H01L23/32;

  • 国家 JP

  • 入库时间 2022-08-21 17:44:24

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