首页> 外国专利> SEMICONDUCTOR EXPOSURE DEVICE, SEMICONDUCTOR INSPECTION DEVICE, AND EXPOSURE DEVICE FAULT DIAGNOSIS SYSTEM

SEMICONDUCTOR EXPOSURE DEVICE, SEMICONDUCTOR INSPECTION DEVICE, AND EXPOSURE DEVICE FAULT DIAGNOSIS SYSTEM

机译:半导体曝光设备,半导体检查设备和曝光设备故障诊断系统

摘要

PROBLEM TO BE SOLVED: To detect an abnormality of an EUV light source in a vacuum case at an early stage, without discharging electricity into the air.;SOLUTION: There is provided a semiconductor exposure device comprising: an EUV light source configured to generate plasma under a reduced pressure equal to or lower than an atmospheric pressure and capture EUV light emitted by the plasma; a first optical system configured to lead the EUV light from the EUV light source to a mask on which a desired semiconductor pattern is formed; and a second optical system configured to lead light reflected from the mask or light that has passed through the mask to a sample. The semiconductor exposure device comprises a detection module 180 configured to detect acoustic emission of the light source, and detects an abnormality of the light source based on an output of the detection module 180.;COPYRIGHT: (C)2012,JPO&INPIT
机译:解决的问题:在早期阶段在真空情况下检测EUV光源的异常,而不将空气排放到空气中。解决方案:提供了一种半导体曝光装置,其包括:被配置为产生等离子体的EUV光源。在等于或低于大气压的减压下捕获等离子体发射的EUV光;第一光学系统,被配置为将来自EUV光源的EUV光引导至在其上形成期望的半导体图案的掩模;第二光学系统,其配置为将由所述掩模反射的光或已经穿过所述掩模的光引导至样品。半导体曝光装置包括配置为检测光源的声发射的检测模块180,并基于检测模块180的输出来检测光源的异常。;版权所有:(C)2012,JPO&INPIT

著录项

  • 公开/公告号JP2012099767A

    专利类型

  • 公开/公告日2012-05-24

    原文格式PDF

  • 申请/专利权人 TOSHIBA CORP;

    申请/专利号JP20100248556

  • 发明设计人 TAWARAYAMA KAZUO;

    申请日2010-11-05

  • 分类号H01L21/027;G21K5/00;G21K5/02;H05G2/00;G01N29/14;

  • 国家 JP

  • 入库时间 2022-08-21 17:42:52

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号