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NONVOLATILE MEMORY DEVICE, MEMORY CONTROLLER, OPERATION METHODS THEREOF, OPERATION METHOD OF MEMORY SYSTEM, AND WEAR-LEVELING METHOD

机译:非易失性存储器装置,存储器控制器,其操作方法,存储器系统的操作方法和磨损水平方法

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile memory device, a memory controller, an operation methods thereof, an operation method of a memory system, and a wear-leveling method, in which deterioration of a memory cell can be accurately detected.SOLUTION: An operation method of a non-volatile memory device of the present invention comprises steps of: receiving a block address and an erase command output from a controller; changing, until an erase operation performed according to the erase command is completed on a block corresponding to the block address, a parameter value related to the erase operation; storing information corresponding to a finally changed parameter value; and transmitting the information to the controller according to a command output from the controller.
机译:解决的问题:提供一种非易失性存储装置,存储控制器,其操作方法,存储系统的操作方法和耗损均衡方法,其中可以精确地检测存储单元的劣化。本发明的非易失性存储装置的操作方法包括以下步骤:接收从控制器输出的块地址和擦除命令;以及改变与擦除操作有关的参数值,直到在与块地址相对应的块上完成了根据擦除命令执行的擦除操作为止;存储与最终改变的参数值相对应的信息;根据从控制器输出的命令将信息发送到控制器。

著录项

  • 公开/公告号JP2012174331A

    专利类型

  • 公开/公告日2012-09-10

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO LTD;

    申请/专利号JP20110289737

  • 发明设计人 LEE SANG HOON;

    申请日2011-12-28

  • 分类号G11C29;G11C16/02;G11C29/56;G11C29/44;G11C17;

  • 国家 JP

  • 入库时间 2022-08-21 17:42:40

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