Self-referential reading method of spin transfer torque memory

摘要

Self-reference reading of the magnetic tunnel junction data cell is disclosed. Exemplary methods include the step of forming a read current by applying a read voltage to the magnetic tunnel junction data cell. The magnetic tunnel junction data cell has a first resistance state. Read voltage is sufficient to switch the resistance of the magnetic tunnel junction data cell. The method includes the step of determining whether kept constant during the step of reading the current by detecting the read current is applied. If the read current during the application steps are kept constant, the first resistance state of the magnetic tunnel junction data cell is a resistance state read voltage was sufficient to switch the magnetic tunnel junction data cell .