首页> 外国专利> SURFACE-EMITTING LASER AND SURFACE-EMITTING LASER ARRAY, METHOD OF MANUFACTURING SURFACE-EMITTING LASER AND METHOD OF MANUFACTURING SURFACE-EMITTING LASER ARRAY, AND OPTICAL EQUIPMENT HAVING SURFACE-EMITTING LASER ARRAY

SURFACE-EMITTING LASER AND SURFACE-EMITTING LASER ARRAY, METHOD OF MANUFACTURING SURFACE-EMITTING LASER AND METHOD OF MANUFACTURING SURFACE-EMITTING LASER ARRAY, AND OPTICAL EQUIPMENT HAVING SURFACE-EMITTING LASER ARRAY

机译:面发射激光和面发射激光阵列,制造面发射激光阵列的方法和制造方法以及具有面发射激光阵列的光学设备

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a surface-emitting laser which is capable of forming a surface relief structure that enables the accurate positioning of the center position of the surface relief structure and that of a current constriction structure, and that can introduce a sufficient loss difference between a fundamental lateral mode and a high-order lateral mode.;SOLUTION: Removal of a dielectric film on a semiconductor layer and removal of a first etching stop layer along a second pattern are performed in the same process after formation of a current constriction structure by using second and third etching stop layers. A surface relief structure consists of three layers of a lower layer, an intermediate layer, and an upper layer. A total layer thickness of the lower layer, the intermediate layer, and the upper layer is defined as an optical thickness equivalent to odd-number times of 1/4 wavelength (odd-number times of /4n, is an oscillation wavelength, and n is a refractive index of the semiconductor layer). The second etching stop layer is provided immediately below the lower layer. The first etching stop layer is laminated immediately above the second etching stop layer.;COPYRIGHT: (C)2012,JPO&INPIT
机译:解决的问题:提供一种制造表面发射激光器的方法,该方法能够形成表面浮雕结构,该表面浮雕结构能够精确定位表面浮雕结构的中心位置和电流限制结构的中心位置,并且能够在基本横向模式和高阶横向模式之间引入足够的损耗差。;解决方案:在形成之后,在同一过程中执行半导体层上介电膜的去除和沿第二图案的第一蚀刻停止层的去除通过使用第二和第三蚀刻停止层来形成电流收缩结构。表面起伏结构由下层,中间层和上层三层组成。将下层,中间层和上层的总层厚度定义为等于1/4波长的奇数倍(/ 4n的奇数倍,是振荡波长)的光学厚度。是半导体层的折射率)。第二蚀刻停止层设置在下层的正下方。第一刻蚀停止层紧接在第二刻蚀停止层上方。版权所有:(C)2012,JPO&INPIT

著录项

  • 公开/公告号JP2012104529A

    专利类型

  • 公开/公告日2012-05-31

    原文格式PDF

  • 申请/专利权人 CANON INC;

    申请/专利号JP20100249402

  • 发明设计人 UCHIDA TATSURO;UCHIDA TAKESHI;

    申请日2010-11-08

  • 分类号H01S5/183;

  • 国家 JP

  • 入库时间 2022-08-21 17:42:10

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