首页> 外国专利> SPINTRONICS DEVICE, METHOD FOR ENHANCING PERFORMANCE OF SPINTRONICS DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND MAGNETIC READ HEAD AND METHOD FOR MANUFACTURING THE SAME

SPINTRONICS DEVICE, METHOD FOR ENHANCING PERFORMANCE OF SPINTRONICS DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND MAGNETIC READ HEAD AND METHOD FOR MANUFACTURING THE SAME

机译:电子器件,增强电子器件性能的方法及其制造方法,以及磁读取头及其制造方法

摘要

PROBLEM TO BE SOLVED: To enhance device performance of a spintronics device and a magnetic read head, particularly Magneto-Resistance (MR) and Resistance-Area product (RA) ratios.SOLUTION: One or more Magneto-Resistance Enhancing Layers (MRELs) are inserted into approximately a center of one or more of active layers (such as API layer 150, Free layers 170 and SIL layers) respectively. A MREL is a layer of a low band gap, high electron mobility semiconductor such as ZnO or a semimetal having those characteristics such as Bi. Furthermore, an interface(s) between the MREL and an active layer into which it has been inserted may be bridged by a thin layer of a highly conductive metal such as copper so as to ensure an ohmic contact across the full interface between the MREL and the active layer.
机译:解决的问题:要提高自旋电子器件和磁头的性能,尤其是磁阻(MR)和电阻面积乘积(RA)的比例。解决方案:一个或多个磁阻增强层(MREL)是分别插入到一个或多个活动层(例如API层150,自由层170和SIL层)的大约中心位置。 MREL是一层低带隙,高电子迁移率的半导体(例如ZnO)或具有那些特性(例如Bi)的半金属。此外,MREL和已经插入了MREL的有源层之间的界面可以通过诸如铜的高导电性金属的薄层桥接,以确保横跨MREL和MREL之间的整个界面的欧姆接触。活动层。

著录项

  • 公开/公告号JP2011233900A

    专利类型

  • 公开/公告日2011-11-17

    原文格式PDF

  • 申请/专利权人 HEADWAY TECHNOLOGIES INC;

    申请/专利号JP20110098800

  • 发明设计人 ZHANG KUNLIANG;LI MIN;YUCHEN ZHOU;

    申请日2011-04-26

  • 分类号H01L29/82;H01L43/08;H01L43/10;H01L21/8246;H01L27/105;H01L43/12;G11B5/39;

  • 国家 JP

  • 入库时间 2022-08-21 17:41:25

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