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Method for depositing carbon-containing silicon oxide film or carbon-containing silicon nitride film having enhanced etch resistance
Method for depositing carbon-containing silicon oxide film or carbon-containing silicon nitride film having enhanced etch resistance
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机译:沉积具有增强的抗蚀刻性的含碳氧化硅膜或含碳氮化硅膜的方法
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摘要
The present invention discloses a process for depositing a carbon containing silicon oxide film, or a carbon containing silicon nitride film having enhanced etch resistance. The process comprises using a silicon containing precursor, a carbon containing precursor and a chemical modifier. The present invention also discloses a process for depositing a silicon oxide film, or silicon nitride film having enhanced etch resistance comprising using an organosilane precursor and a chemical modifier.
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