首页> 外国专利> METHOD FOR MEASURING ABSOLUTE VALUE OF ELECTRIC FIELD ENHANCEMENT DEGREE, DEVICE FOR MEASURING ABSOLUTE VALUE OF ELECTRIC FIELD ENHANCEMENT DEGREE, METHOD FOR EVALUATING MEASUREMENT MEMBER, DEVICE FOR EVALUATING MEASUREMENT MEMBER, METHOD FOR DETECTING ANALYTE AND DEVICE FOR DETECTING ANALYTE

METHOD FOR MEASURING ABSOLUTE VALUE OF ELECTRIC FIELD ENHANCEMENT DEGREE, DEVICE FOR MEASURING ABSOLUTE VALUE OF ELECTRIC FIELD ENHANCEMENT DEGREE, METHOD FOR EVALUATING MEASUREMENT MEMBER, DEVICE FOR EVALUATING MEASUREMENT MEMBER, METHOD FOR DETECTING ANALYTE AND DEVICE FOR DETECTING ANALYTE

机译:电场增强度的绝对值的测定方法,电场增强度的绝对值的测定装置,测定构件的测定方法,测定构件的测定装置,分析物的测定方法以及检测装置

摘要

PROBLEM TO BE SOLVED: To provide a method and device capable of measuring an electric field enhancement degree on a plane (in a plane direction) of a metallic thin film of a real target of measurement, and also obtaining three dimensional distribution of electric field enhancement degrees corresponding to thickness of the metallic thin film and a height position of an analyte captured in a vicinity of the metallic thin film so as to measure (or estimate) an accurate electric field enhancement degree.;SOLUTION: In the method and device, a first excitation light is irradiated from a light source to generate a surface plasmon light on a surface of a metallic thin film, and a second excitation light which is different from the first excitation light is irradiated toward the metallic thin film to generate a second light on the surface of the metallic thin film, so that an interference pattern is formed by the surface plasmon light and the second light, and while changing a light volume of the second excitation light, based on the light volume of the second excitation light when contrast of the interference pattern becomes strongest, an electric field enhancement degree at a predetermined height position of an electric field enhancement degree measurement member is converted for estimation.;COPYRIGHT: (C)2012,JPO&INPIT
机译:解决的问题:提供一种方法和装置,其能够测量实际测量目标的金属薄膜的平面(在平面方向上)的电场增强程度,并且还能够获得电场增强的三维分布对应于金属薄膜的厚度和在金属薄膜附近捕获的分析物的高度位置的角度,以测量(或估计)准确的电场增强度。解决方案:在该方法和装置中,从光源照射第一激发光以在金属薄膜的表面上产生表面等离子体激元光,并且向金属薄膜照射与第一激发光不同的第二激发光以在金属薄膜上产生第二等离子体光。在金属薄膜的表面上,使得由表面等离激元光和第二光形成干涉图案,并且改变t的光量在第二激发光中,当干涉图案的对比度最强时,基于第二激发光的光量,对电场增强度测量部件的预定高度位置处的电场增强度进行转换以进行估计。 (C)2012,日本特许厅

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