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Plasma processing apparatus, plasma generation introduction member and dielectric

机译:等离子体处理装置,等离子体产生导入部件和电介质

摘要

A plasma processing apparatus applies a high-quality process to an object to be processed by preventing impurities from being generated due to a microwave transmitting through a dielectric plate. The dielectric plate is provided between a process chamber of a plasma processing apparatus and a slot electrode guiding a microwave used for a plasma process. A thickness H of the dielectric plate has a predetermined relationship with a wavelength lambd of the microwave in the dielectric plate so that an amount of isolation of the dielectric plate due to transmission of the microwave is minimized. The wavelength lambd is represented by lambd=lambd0n, where lambd0 is a wavelength of the microwave in a vacuum and n is a wavelength reducing rate of the dielectric plate represented by n=1/(epsit)½, where epsit is a specific dielectric rate of the dielectric plate in a vacuum.
机译:等离子体处理装置通过防止由于微波透过电介质板而产生杂质,从而对被处理物进行高质量的处理。介电板设置在等离子体处理装置的处理室和引导用于等离子体处理的微波的缝隙电极之间。电介质板的厚度H与电介质板中的微波的波长λlam具有预定的关系,从而使由于微波的透射而引起的电介质板的隔离量最小。波长lambd由lambd = lambd0n表示,其中lambd0是真空中微波的波长,n是介电板的波长减小率,由n = 1 /(epsit)1/2表示,其中epsit是特定介电率真空中电介质板的厚度。

著录项

  • 公开/公告号JP4849705B2

    专利类型

  • 公开/公告日2012-01-11

    原文格式PDF

  • 申请/专利权人 東京エレクトロン株式会社;

    申请/专利号JP20000085264

  • 发明设计人 大沢 哲;本郷 俊明;

    申请日2000-03-24

  • 分类号H01L21/31;B01J19/08;C23C16/511;H01L21/3065;H05H1/46;

  • 国家 JP

  • 入库时间 2022-08-21 17:39:00

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