Cu-In-Ga ternary sintered alloy sputtering target manufacturing method of

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a Cu-In-Ga ternary sintered alloy sputtering target, which is used for forming a Cu-In-Ga-Se quaternary alloy film for forming a light absorbing layer of a solar cell.;SOLUTION: A Cu-Ga binary mother alloy powder having a component composition containing, by mass, 20-50% Ga, and the balance Cu with inevitable impurities as raw material powder, Cu-In binary mother alloy powder having a component composition containing 20-70% In, and the balance Cu with inevitable impurities as raw material powder, and pure Cu powder are prepared. These raw material powders are blended and mixed so as to have a component composition containing, 40-60% In, 1-45% Ga, and the balance Cu to produce the mixed powder. The obtained mixed powder is press-formed to manufacture a formed body, and the obtained formed body is sintered.;COPYRIGHT: (C)2009,JPO&INPIT