The 1st field of the mannered null IIIV substrate structure which forms the IIIV substrate structure which possesses with the enhancement

摘要

It is the semiconductor structure which has with the enhancement mode transistor device which is arranged in the 1st territory and the depression mode transistor device which is arranged in the 2nd territory which slips in cross direction. With respect to channel layer, enhancement mode transistor device InGaP etching stop/Schottky contact layer is arranged, the 1st layer which InGaP differs on InGaP layer, is arranged, with respect to 1st layer, depression mode transistor device etching stop layer is arranged, 2nd layer is arranged with respect to depression mode transistor device etching stop layer. The depression mode transistor device penetrates 2nd layer and depression mode transistor device etching stop layer and possesses the gate recess which terminates at 1st layer. The enhancement mode transistor device, 2nd layer and depression mode transistor device etching stop layer, penetrates 1st layer and possesses the gate recess which terminates at InGaP layer.