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3T pixel for CMOS image sensor with low reset noise and low dark current using parametric reset
3T pixel for CMOS image sensor with low reset noise and low dark current using parametric reset
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机译:适用于CMOS图像传感器的3T像素,具有低复位噪声和使用参数复位的低暗电流
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摘要
The present invention describes in detail the solid-state image sensor, specifically the image sensors pixel that has three transistors, high sensitivity, low reset noise, and low dark current. Low reset noise is achieved by parametrically changing the voltage dependent capacitance of the charge detection node in such a manner that during reset the charge detection node capacitance is low while during sensing and integration cycles the charge detection node capacitance is high. This feature thus results in high dynamic range, which is important for sensors using very small pixels. The low dark current generation is achieved by quenching the interface states by placing a p+ implant near the silicon-silicon dioxide interface.
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