首页> 外国专利> Restoration the metal in the aforementioned perforation hole of the base substance where production manner and the metal restoration microstructure

Restoration the metal in the aforementioned perforation hole of the base substance where production manner and the metal restoration microstructure

机译:在生产方式和基础上的金属修复微观结构中,在上述基础物质的穿孔中还原金属

摘要

PROBLEM TO BE SOLVED: To provide an anisotropic conductive member usable as an electrically connecting member and an inspection connector of an electronic part such as a semiconductor element even at the present time where high integration is further advanced by remarkably improving installation density of a conductive passage, to provide a metal-filled microstructure used as its anisotropic conductive member, and to provide a manufacturing method thereof.;SOLUTION: This manufacturing method of the metal-filled microstructure obtained by filling a metal in through-holes of a base body having the though-holes having an average opening hole diameter of 5-500 nm with density not less than 2,000,000 pieces/mm2, includes at least a hydrophilicizing process of applying hydrophilicizing processing to the base body, and a metal filling process of filling the metal in the through-holes by applying plating processing after the hydrophilicizing process.;COPYRIGHT: (C)2009,JPO&INPIT
机译:解决的问题:即使在目前通过显着提高导电通路的安装密度进一步提高了集成度的情况下,也提供一种各向异性导电构件,该各向异性导电构件可用作电子连接部件和诸如半导体元件的电子部件的检查连接器。提供一种用作其各向异性导电构件的填充金属的微结构,并提供其制造方法。解决方案:通过将金属填充在具有金属的基体的通孔中而获得的填充金属的微结构的制造方法。平均开口直径为5-500nm,密度不小于2,000,000个/ mm 2 的通孔,至少包括对基体进行亲水化处理的亲水化处理,以及金属亲水化处理后,通过电镀处理将金属填充到通孔中的填充工艺。;版权所有:(C)2009,JPO&INPIT

著录项

  • 公开/公告号JP5043691B2

    专利类型

  • 公开/公告日2012-10-10

    原文格式PDF

  • 申请/专利权人 富士フイルム株式会社;

    申请/专利号JP20080004588

  • 发明设计人 畠中 優介;上杉 彰男;

    申请日2008-01-11

  • 分类号H01R43/00;H01B13/00;H01B5/16;H01R11/01;

  • 国家 JP

  • 入库时间 2022-08-21 17:37:57

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号