How to integrate a metal having for forming the CMOS gate having the structure associated with high-k gate dielectric, a work function different

摘要

In one general embodiment, in order to form NMOS gate of the dual metal PMOS gates (226) and (228), substrate (202) on the first metal layer (206) and the second metal layer (208) As a method for integrating, depositing a dielectric layer (204) PMOS region and the (210) NMOS region of the substrate (202) to (212) above. Furthermore, the method for depositing a first metal layer on the dielectric layer (204) on. Furthermore, the deposition (208) the second metal layer first metal layer (206) on the way, (150). Furthermore, the injected nitrogen NMOS region of the substrate (202) to (210) instead of (220) metal oxide layer a first portion (206) (152), the first metal layer the method, (154), I changed to (218) metal nitride layer and a second portion (206) the first metal layer. In addition, to form a (228) NMOS gate PMOS gate and (226), the method (156). Comprises segments (218) and (234) metal nitride layer (226) comprises (242) segments (220) metal oxide layer (228) PMOS gate NMOS gate.