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Being the manner which decreases the optical proximity effect where the sensitization which is used at the time of photo mask processing and semiconductor treating

机译:是在光掩模加工和半导体处理时使用的增感时降低光学接近效应的方式

摘要

PROBLEM TO BE SOLVED: To reduce optical proximity effect in photomask fabrication, the manufacture of a semiconductor device or the fabrication of MEMS features on a substrate.;SOLUTION: A photoresist composition includes a sensitizer which works in combination with a DUV photoresist including a PAC, to sensitize the photoresist to G-line, H-line or I-line imaging.;COPYRIGHT: (C)2010,JPO&INPIT
机译:解决的问题:为了减少光掩模制造,半导体器件的制造或在基板上的MEMS特征的制造中的光学邻近效应;解决方案:光致抗蚀剂组合物包含与DUV光致抗蚀剂(包括PAC)结合使用的敏化剂,以使光刻胶对G线,H线或I线成像敏感。;版权所有:(C)2010,JPO&INPIT

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