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TRANSMISSION GATE-BASED SPIN-TRANSFER TORQUE MEMORY UNIT
TRANSMISSION GATE-BASED SPIN-TRANSFER TORQUE MEMORY UNIT
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机译:基于传输门的自转扭矩存储单元
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摘要
A transmission gate-based spin-transfer torque memory unit is described. The memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. A NMOS transistor is in parallel electrical connection with a PMOS transistor and they are electrically connected with the source line and the magnetic tunnel junction data cell. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. The PMOS transistor and the NMOS transistor are separately addressable so that a first write current in a first direction flows through the PMOS transistor and a second write current in a second direction flows through the NMOS transistor.
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