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METHOD AND APPARATUS FOR WRITING TO A MAGNETIC TUNNEL JUNCTION (MTJ) BY APPLYING INCREMENTALLY INCREASING VOLTAGE LEVEL
METHOD AND APPARATUS FOR WRITING TO A MAGNETIC TUNNEL JUNCTION (MTJ) BY APPLYING INCREMENTALLY INCREASING VOLTAGE LEVEL
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机译:通过增加电压等级来写入磁性隧道结(MTJ)的方法和装置
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摘要
A method of writing to magnetic tunnel junctions (MTJs) of a magnetic memory array includes storing in-coming data in a cache register, reading the present logic state of a first one of a set of at least two MTJs, the set of at least two MTJs including the first MTJ and a second MTJ. The in-coming data is to be written into the second MTJ. Further steps are storing the read logic state into a data register, swapping the contents of the data register and the cache register so that the cache register stores the read logic state and the data register stores the in-coming data, applying a first predetermined voltage level to the set of MTJs thereby causing the first MTJ to be over-written, applying a second predetermined voltage level to the set of MTJs, and storing the in-coming data into the second MTJ.
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