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SEMICONDUCTOR DEVICE INCLUDING SCHOTTKY BARRIER JUNCTION AND PN JUNCTION
SEMICONDUCTOR DEVICE INCLUDING SCHOTTKY BARRIER JUNCTION AND PN JUNCTION
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机译:包括肖特基势垒结和PN结的半导体器件
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摘要
A semiconductor device includes a first conductivity-type semiconductor stack including the recesses which extend from a first principal surface toward a second principal surface and have bottoms not reaching the second principal surface, the second conductivity-type anode regions which are embedded at a distance from one another in the first principal surface, each of which has a part of an outer edge region exposed to a side surface of the corresponding recess, an anode electrode which is provided on the first principal surface of the semiconductor stack to form a Schottky barrier junction with the semiconductor stack in a region where the plurality of anode regions are not formed and form ohmic junctions with the anode regions; and a cathode electrode provided on the second principal surface of the semiconductor stack.
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