LOW LEAKAGE DYNAMIC BI-DIRECTIONAL BODY-SNATCHING (LLDBBS) SCHEME FOR HIGH SPEED ANALOG SWITCHES

摘要

A bidirectional switch device includes a main pass field effect transistor (FET) connected to an input node and an output node. A body region of the first main pass transistor is tied to a voltage substantially halfway between the voltage at the input node side of the first main pass transistor and the voltage at the output node side of the transistor when the first main pass transistor is in an ON state.