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Performance Enhancement in Metallization Systems of Microstructure Devices by Incorporating an Intermediate Barrier Layer
Performance Enhancement in Metallization Systems of Microstructure Devices by Incorporating an Intermediate Barrier Layer
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机译:通过结合中间阻挡层来提高微结构器件金属化系统的性能
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摘要
In metallization systems of complex semiconductor devices, an intermediate interface layer may be incorporated into the interconnect structures in order to provide superior electromigration performance. To this end, the deposition of the actual fill material may be interrupted at an appropriate stage and the interface layer may be formed, for instance, by deposition, surface treatment and the like, followed by the further deposition of the actual fill metal. In this manner, the grain size issue, in particular at lower portions of the scaled inter-connect features, may be addressed.
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