首页> 外国专利> HIGH EFFICIENCY 4-PI NEGATRON BETA-3 PARTICLE EMISSION SOURCE FABRICATION AND ITS USE AS AN ELECTRODE IN A SELF-CHARGED HIGH-VOLTAGE CAPACITOR

HIGH EFFICIENCY 4-PI NEGATRON BETA-3 PARTICLE EMISSION SOURCE FABRICATION AND ITS USE AS AN ELECTRODE IN A SELF-CHARGED HIGH-VOLTAGE CAPACITOR

机译:高效4-PI NEGATRON BETA-3颗粒物发射源的制备及其在自充电高压电容器中的电极使用

摘要

The present invention is directed to an encapsulated β particle emitter that comprises a sol-gel derived core that comprises a β-emitting radioisotope and an encapsulant enclosing the core through which at least some of the β emissions from the β-emitting radioisotope pass, wherein the encapsulant comprises a substrate and a cover and at least a portion of the encapsulant is electrically conductive, and a method for making the same. Additionally, the present invention is directed to a capacitor comprising such an encapsulated β particle emitter and a method of performing work with such a capacitor.
机译:本发明涉及一种包封的β-粒子发射体,其包括溶胶-凝胶衍生的核,该核包含发射β-的放射性同位素和包封该核的包封剂,来自发射β-的放射性同位素通过的至少一些β-发射,其中所述密封剂包括衬底和盖,并且所述密封剂的至少一部分是电学的导电性及其制造方法。另外,本发明涉及一种包括这种封装的β-粒子发射极的电容器,以及利用这种电容器进行功的方法。

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