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NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE FOR SUPPRESSING DETERIORATION IN JUNCTION BREAKDOWN VOLTAGE AND SURFACE BREAKDOWN VOLTAGE OF TRANSISTOR
NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE FOR SUPPRESSING DETERIORATION IN JUNCTION BREAKDOWN VOLTAGE AND SURFACE BREAKDOWN VOLTAGE OF TRANSISTOR
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机译:用于抑制晶体管的结击穿电压和表面击穿电压的劣化的非易失性半导体存储器
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摘要
According to one embodiment, a non-volatile semiconductor memory device includes a plurality of memory cells and a transistor. The transistor includes a gate insulating film, a gate electrode on the gate insulating film, a sidewall insulating film on both side surfaces of the gate electrode, a source diffusion layer corresponding to the sidewall insulating film, a first hollow formed in a position at a height less than a bottom surface of the gate insulating film directly below an outer side surface of the sidewall insulating film of another side of the gate electrode, a second hollow formed in the first hollow at a position at a height less than the first hollow, and a drain diffusion layer corresponding to another side of the gate electrode and including a low-concentration drain region formed on a bottom surface of the second hollow and a high-concentration drain region.
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