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OPTIMIZATION-BASED SIMULATED ANNEALING FOR INTEGRATED CIRCUIT PLACEMENT

机译:集成电路布局的基于优化的模拟退火

摘要

Generating of the initial temperature value for a simulated annealing process in the placement of circuit components in the physical design of integrated circuit (IC) is based on previous partitioning, if any, of the IC components into bins. An iteration limit value is then assigned equal to the initial temperature value. The simulated annealing process is then performed on a current partitioning of the IC components into bins according to the iteration limit value. The IC components are partitioned further into an exponentially larger total number of smaller bins compared to a previous number of bins. The process is then repeated starting with the operation of generating an initial temperature value for the simulated annealing process until the number of circuit components in each bin is below a specified number.
机译:在集成电路(IC)的物理设计中,在放置电路组件的过程中,为模拟退火过程生成初始温度值是基于先前将这些IC组件划分为多个部分的过程。然后,将迭代极限值分配为等于初始温度值。然后,根据迭代极限值对将IC组件当前划分为仓的电流进行模拟退火处理。与以前的存储柜数量相比,IC组件被进一步划分为较小的存储柜总数的指数级增加。然后从生成用于模拟退火过程的初始温度值的操作开始重复该过程,直到每个仓中的电路组件的数量低于指定数量。

著录项

  • 公开/公告号US2012136633A1

    专利类型

  • 公开/公告日2012-05-31

    原文格式PDF

  • 申请/专利权人 HUAIYU XU;

    申请/专利号US201013256635

  • 发明设计人 HUAIYU XU;

    申请日2010-05-25

  • 分类号G06F17/50;

  • 国家 US

  • 入库时间 2022-08-21 17:31:30

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