Scalable transfer-join bonding techniques are provided. In one aspect, a transfer-join bonding method is provided. The method includes the following steps. A first bonding structure is provided having at least one metal pad embedded in an insulator and at least one via in the insulator over the metal pad. The via has tapered sidewalls. A second bonding structure is provided having at least one copper stud tapered to complement the tapered sidewalls of the via, such that the via and the copper stud fit together like a lock-and-key. The first bonding structure is bonded to the second bonding structure by way of a metal-to-metal bonding between the metal pad and the copper stud. A transfer join bonded structure is also provided.
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