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Method for making microstructures by converting porous silicon into porous metal or ceramics

机译:通过将多孔硅转变成多孔金属或陶瓷来制造微结构的方法

摘要

A method for making a micro structure (100) is proposed. The method starts with the step of providing a silicon substrate (102), which has a main surface. A porous silicon layer (103)—extending into the silicon substrate from the main surface—is then formed. The method continues by etching the porous silicon layer selectively to obtain a set of projecting microelements of porous silicon (112); each projecting microelement projects from a remaining portion of the silicon substrate (106), thereby exposing a corresponding external surface. The projecting microelements are then treated to obtain a set of corresponding conductive (115) or insulating (115′) microelements; each conductive or insulating microelement is obtained by converting at least a prevalent portion of the porous silicon (extending into the corresponding projecting element from the external surface) into porous metal or ceramics, respectively.
机译:提出了一种制造微结构( 100 )的方法。该方法开始于提供具有主表面的硅衬底( 102 )的步骤。然后形成从主表面延伸到硅衬底中的多孔硅层( 103 )。该方法通过选择性地蚀刻多孔硅层而继续进行,以获得一组多孔硅的突出微元素( 112 );每个突出的微量元素从硅衬底的其余部分( 106 )突出,从而露出相应的外表面。然后处理突出的微量元素,以获得一组相应的导电( 115 )或绝缘的( 115 ')微量元素;通过将多孔硅的至少大部分(从外表面延伸到相应的突出元素中)分别转换成多孔金属或陶瓷,可以获得每种导电或绝缘微元素。

著录项

  • 公开/公告号US8268640B2

    专利类型

  • 公开/公告日2012-09-18

    原文格式PDF

  • 申请/专利权人 MARCO BALUCANI;

    申请/专利号US20090933532

  • 发明设计人 MARCO BALUCANI;

    申请日2009-03-18

  • 分类号H01L21/00;H01L21/44;H01L21/48;H01L21/50;H01L21/20;

  • 国家 US

  • 入库时间 2022-08-21 17:31:13

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