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Electrostatic discharge protection method and device for semiconductor device including an electrostatic discharge protection element providing a discharge path of a surge current
Electrostatic discharge protection method and device for semiconductor device including an electrostatic discharge protection element providing a discharge path of a surge current
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机译:包括用于提供浪涌电流的放电路径的静电放电保护元件的半导体装置的静电放电保护方法和装置
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摘要
An electrostatic discharge protection device includes a first bipolar transistor having a collector terminal connected with a first power supply terminal, an emitter terminal connected with the input/output terminal, and a base terminal connected with a second power supply terminal, a second bipolar transistor having a collector terminal connected with the second power supply terminal, an emitter terminal connected with the input/output terminal, and a base terminal connected with the first power supply terminal, one of the first and second bipolar transistors ensuring a continuity between the collector terminal and emitter terminal under such conditions that a potential difference between the first or second power supply terminal and the input/output terminal is lower than a breakdown voltage at a PN junction between the emitter terminal and the base terminal of the other bipolar transistor.
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